id: MzE3NTQxIDE3

reference: 317541

documentId: 317541

connectionPointId: 17

Titolo di lavoro: INGEGNERE DEI MATERIALI

Descrizione del lavoro:
FBK-CMM is looking for a dynamic, highly motivated, independent researcher in the field of silicon radiation sensors, for the development of cutting edge photo-detector technology that will be used to build next-generation systems in medical imaging, LiDARs, and large scientific experiments. Initially the research activity will concentrate on the next generation of low-level light sensors: single photon avalanche diodes (SPADs) and Silicon Photomultipliers (SiPMs) developed using a fully customized fabrication technology, either employing FBK internal clean-room or external silicon foundries. The activity will be focused on the conception of new technological solutions and understanding/improvement of device properties through TCAD simulations and experimental characterization. The work will be performed in close collaboration with other device and process engineers. The selected candidate will become a key part of the team working on photo-sensor developments, actively participating to the dissemination and networking activities. The successful candidate is expected to: • Conduct innovative research on silicon-based radiation sensors; • Understand, design and simulate the detector structures • Prepare and perform electrical and electro-optical detector characterization • Contribute to the IRIS unit’s dissemination activities; • Interact daily with the research team to interpret the operative needs and requirements; • Report regularly on projects/activities status; • Cooperate and communicate effectively with the Unit’s Head and other project members, providing assistance and technical support; • Review research deliverables and initiate appropriate corrective actions. The ideal candidate shall have a physics or electronic engineering background with an emphasis on semiconductor device physics. Strong attitude to team-working and good collaboration skills are also a requirement. Experience on electro-optical characterization techniques and set-ups are preferred. Required: • Ph.D. in Electronics, Physics, Material Science or related fields; • Solid background in semiconductor device physics; • Strong attitude to research activity and innovation; • Strong teamwork attitude; • Very good scientific background; • Significant number of published scientific papers in relevant fields; • Excellent knowledge of English (oral and written); • Enthusiastic attitude to research activity. Preferred: • Background in semiconductor light sensors and their characterization; • Experience in simulation tools for devices and processes • Knowledge of scintillator-based radiation detectors; • Knowledge of silicon processing technology. • Experience in electro-optical measurements laboratory setups • Scientific publications relevant to the field of SPAD/SiPM detectors; • Visiting scholarship or experience at international level. Employment Type of contract Tenure Track position leading to an FBK 3rd Level Researcher (R3) permanent contract. The maximum duration of the Tenure Track contract is up to 5 years (which may be reduced depending on the assessment by the Committee of the candidate’s capacities and skills). If the final assessment of the Tenure Track experience is positive, the selected candidate for the tenure track position will be offered a permanent R3 contract. Application Candidates are required to submit their applications by filling in the online form at https://hr.fbk.eu/en/jobs. Please ensure that your application includes the following attachments (.pdf format): 1. Detailed CV including a publications list

numberOfPosts: 1

jobCategoriesCodes_0: http://data.europa.eu/esco/isco/C2149

requiredEducationLevelCode: 5

positionTypeCode: temporary

contractTypeCodes_0: fulltime

Nome del datore di lavoro: FONDAZIONE BRUNO KESSLER

employer_website: jobs (at) fbk.eu

source: Anpal